INK0112AC1 Todos los transistores

 

INK0112AC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: INK0112AC1

Código: K7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Conductancia de drenaje-sustrato (Cd): 13 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: SC-59

Búsqueda de reemplazo de MOSFET INK0112AC1

 

INK0112AC1 Datasheet (PDF)

1.1. ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf Size:205K _update-mosfet

INK0112AC1
INK0112AC1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit:mm) INK0112AX is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE ① ・Input impedance is high, and not necessary to JEIT

1.2. ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf Size:205K _isahaya

INK0112AC1
INK0112AC1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit:mm) INK0112AX is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE ① ・Input impedance is high, and not necessary to JEIT

 4.1. ink011bap1.pdf Size:109K _update-mosfet

INK0112AC1
INK0112AC1



4.2. ink011bap1.pdf Size:109K _isahaya

INK0112AC1
INK0112AC1



Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top