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INK0112AC1 Spec and Replacement


   Type Designator: INK0112AC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SC-59

 INK0112AC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

INK0112AC1 Specs

 ..1. Size:205K  isahaya
 ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf pdf_icon

INK0112AC1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE Input impedance is high, and not necessary to JEIT... See More ⇒

 8.1. Size:109K  isahaya
 ink011bap1.pdf pdf_icon

INK0112AC1

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 9.1. Size:150K  isahaya
 ink0103ac1 ink0103am1 ink0103au1.pdf pdf_icon

INK0112AC1

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 9.2. Size:153K  isahaya
 ink0102ac1 ink0102am1 ink0102au1.pdf pdf_icon

INK0112AC1

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Detailed specifications: INK0012AM1 , INK0012AU1 , INK0102AC1 , INK0102AM1 , INK0102AU1 , INK0103AC1 , INK0103AM1 , INK0103AU1 , IRF630 , INK0112AM1 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 , INK0210AP1 , INK021AAP1 , INK0302AC1 .

Keywords - INK0112AC1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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