INK0210AP1 Todos los transistores

 

INK0210AP1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: INK0210AP1

Código: KA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.5 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Conductancia de drenaje-sustrato (Cd): 28 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: SC-62

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INK0210AP1 Datasheet (PDF)

1.1. ink0210ap1.pdf Size:136K _update-mosfet

INK0210AP1
INK0210AP1

 INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT:mm INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE ・Input impedance is high, and not necessary to MARKING consider a drive electric current.

2.1. ink0210ac1.pdf Size:133K _update-mosfet

INK0210AP1
INK0210AP1

 INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT:mm INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. ① FEATURE ・Input impedance is high, and not necessary to ② ③ consider a drive elect

 4.1. ink021aap1.pdf Size:121K _update-mosfet

INK0210AP1
INK0210AP1



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