INK0210AP1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: INK0210AP1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: SC-62

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INK0210AP1 datasheet

 ..1. Size:136K  isahaya
 ink0210ap1.pdf pdf_icon

INK0210AP1

INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE Input impedance is high, and not necessary to MARKING consider a drive electric current.

 6.1. Size:133K  isahaya
 ink0210ac1.pdf pdf_icon

INK0210AP1

INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect

 8.1. Size:121K  isahaya
 ink021aap1.pdf pdf_icon

INK0210AP1

 9.1. Size:115K  isahaya
 ink0200ac1.pdf pdf_icon

INK0210AP1

MOSTRAR MÁS

Otros transistores... INK0103AM1, INK0103AU1, INK0112AC1, INK0112AM1, INK0112AU1, INK011BAP1, INK0200AC1, INK0210AC1, IRF1010E, INK021AAP1, INK0302AC1, INK0310AP1, IVN5001ANE, IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF