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INK0210AP1 PDF Specs and Replacement


   Type Designator: INK0210AP1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SC-62
 

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INK0210AP1 PDF Specs

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INK0210AP1

INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE Input impedance is high, and not necessary to MARKING consider a drive electric current. ... See More ⇒

 6.1. Size:133K  isahaya
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INK0210AP1

INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect... See More ⇒

 8.1. Size:121K  isahaya
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INK0210AP1

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INK0210AP1

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Detailed specifications: INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 , IRF9540N , INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF , IRC540PBF , IRC630PBF , IRC634PBF .

History: NTTFS4C10NTAG | DHF85N08 | DHF80N08B22

Keywords - INK0210AP1 MOSFET specs

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