All MOSFET. INK0210AP1 Datasheet

 

INK0210AP1 Datasheet and Replacement


   Type Designator: INK0210AP1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SC-62
 

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INK0210AP1 Datasheet (PDF)

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INK0210AP1

INK0210AP1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4machinery, because of low voltage drive and low on resistance. 1.51.6FEATURE Input impedance is high, and not necessary to MARKINGconsider a drive electric current.

 6.1. Size:133K  isahaya
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INK0210AP1

INK0210AC1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect

 8.1. Size:121K  isahaya
 ink021aap1.pdf pdf_icon

INK0210AP1

 9.1. Size:115K  isahaya
 ink0200ac1.pdf pdf_icon

INK0210AP1

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Datasheet: INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 , IRF1010E , INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF , IRC540PBF , IRC630PBF , IRC634PBF .

History: SI4431CDY-T1-E3

Keywords - INK0210AP1 MOSFET datasheet

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