INK0210AP1 Datasheet and Replacement
Type Designator: INK0210AP1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SC-62
INK0210AP1 substitution
INK0210AP1 Datasheet (PDF)
ink0210ap1.pdf

INK0210AP1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4machinery, because of low voltage drive and low on resistance. 1.51.6FEATURE Input impedance is high, and not necessary to MARKINGconsider a drive electric current.
ink0210ac1.pdf

INK0210AC1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect
Datasheet: INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 , IRF1010E , INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF , IRC540PBF , IRC630PBF , IRC634PBF .
History: SI4431CDY-T1-E3
Keywords - INK0210AP1 MOSFET datasheet
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History: SI4431CDY-T1-E3



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