All MOSFET. INK0210AP1 Datasheet

 

INK0210AP1 MOSFET. Datasheet pdf. Equivalent

Type Designator: INK0210AP1

Marking Code: KA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 28 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: SC-62

INK0210AP1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

INK0210AP1 Datasheet (PDF)

1.1. ink0210ap1.pdf Size:136K _update-mosfet

INK0210AP1 INK0210AP1

 INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT：ｍｍ INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE ・Input impedance is high, and not necessary to MARKING consider a drive electric current.

2.1. ink0210ac1.pdf Size:133K _update-mosfet

INK0210AP1 INK0210AP1

 INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT：ｍｍ INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. ① FEATURE ・Input impedance is high, and not necessary to ② ③ consider a drive elect

 4.1. ink021aap1.pdf Size:121K _update-mosfet

INK0210AP1 INK0210AP1



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