CPC3714 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPC3714
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 350 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.24 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 10 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
Encapsulados: SOT-89
Búsqueda de reemplazo de CPC3714 MOSFET
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CPC3714 datasheet
cpc3714.pdf
CPC3714 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e
cpc3714c.pdf
CPC3714 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance i
cpc3710c.pdf
CPC3710 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clare s proprietary 250VP 10 220mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance
cpc3710.pdf
CPC3710 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e
Otros transistores... RFP4N40 , 9N90L-T47 , CPC3701 , CPC3701C , CPC3703 , CPC3703C , CPC3710 , CPC3710C , IRFB31N20D , CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , CPC5602 , CPC5602C , CPC5603 .
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