CPC3714 MOSFET. Datasheet pdf. Equivalent
Type Designator: CPC3714
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.6 V
|Id|ⓘ - Maximum Drain Current: 0.24 A
Tjⓘ - Maximum Junction Temperature: 125 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
Package: SOT-89
CPC3714 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CPC3714 Datasheet (PDF)
cpc3714.pdf
CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3714c.pdf
CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i
cpc3710c.pdf
CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance
cpc3710.pdf
CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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