CPC3714 - Даташиты. Аналоги. Основные параметры
Наименование производителя: CPC3714
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 350 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.24 A
Tj ⓘ - Максимальная температура канала: 125 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 10 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
Тип корпуса: SOT-89
Аналог (замена) для CPC3714
CPC3714 Datasheet (PDF)
cpc3714.pdf

CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3714c.pdf

CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i
cpc3710c.pdf

CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance
cpc3710.pdf

CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
Другие MOSFET... RFP4N40 , 9N90L-T47 , CPC3701 , CPC3701C , CPC3703 , CPC3703C , CPC3710 , CPC3710C , IRF730 , CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , CPC5602 , CPC5602C , CPC5603 .
History: TPCP8301 | STP14NK50Z | HGN023NE6A | AP3990P | WMK10N70C4 | JCS50N06FH
History: TPCP8301 | STP14NK50Z | HGN023NE6A | AP3990P | WMK10N70C4 | JCS50N06FH



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