CPC5602 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPC5602
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 350 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.13 A
Tjⓘ - Temperatura máxima de unión: 85 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
Encapsulados: SOT-223
Búsqueda de reemplazo de CPC5602 MOSFET
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CPC5602 datasheet
cpc5602.pdf
CPC5602 N-Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare s proprietary Max On-Resistance - RDS(on) 14 third generation vertical DMOS process. The third Max Power 2.5 W generation process realizes world class, high voltage MOSFET perf
cpc5602c.pdf
CPC5602 N-Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare s proprietary Max On-Resistance - RDS(on) 14 third generation vertical DMOS process. The third Max Power 2.5 W generation process realizes world class, high voltage MOSFET perf
cpc5603.pdf
CPC5603 N-Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage - VDS 415 V The CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14 Effect Transistor (FET) that utilizes Clare s proprietary Max Power 2.5 W third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe
cpc5603c.pdf
CPC5603 N-Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage - VDS 415 V The CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14 Effect Transistor (FET) that utilizes Clare s proprietary Max Power 2.5 W third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe
Otros transistores... CPC3710 , CPC3710C , CPC3714 , CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , IRF830 , CPC5602C , CPC5603 , CPC5603C , CPH3324 , CPH3327 , CPH3340 , CPH3341 , CPH3362 .
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