All MOSFET. CPC5602 Datasheet

 

CPC5602 Datasheet and Replacement


   Type Designator: CPC5602
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.13 A
   Tj ⓘ - Maximum Junction Temperature: 85 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT-223
 

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CPC5602 Datasheet (PDF)

 ..1. Size:106K  ixys
 cpc5602.pdf pdf_icon

CPC5602

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 0.1. Size:105K  ixys
 cpc5602c.pdf pdf_icon

CPC5602

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 8.1. Size:106K  ixys
 cpc5603.pdf pdf_icon

CPC5602

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 8.2. Size:106K  ixys
 cpc5603c.pdf pdf_icon

CPC5602

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

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Datasheet: CPC3710 , CPC3710C , CPC3714 , CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , IRF1405 , CPC5602C , CPC5603 , CPC5603C , CPH3324 , CPH3327 , CPH3340 , CPH3341 , CPH3362 .

History: BUZ31L | KP8M6 | VBZM8N60 | SI3440ADV | DMZ6005E | NTMFS5C609NLT1G | PSMN7R5-30YLD

Keywords - CPC5602 MOSFET datasheet

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