CPH5852 Todos los transistores

 

CPH5852 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CPH5852

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.9 nS

Cossⓘ - Capacitancia de salida: 47 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm

Encapsulados: CPH5

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CPH5852 datasheet

 ..1. Size:49K  sanyo
cph5852.pdf pdf_icon

CPH5852

Ordering number ENA0336 CPH5852 SANYO Semiconductors DATA SHEET MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5852 General-Purpose Switching Device Applications Features Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS] Low ON-resistance Ultrahigh-speed swi

 9.1. Size:40K  sanyo
cph5802.pdf pdf_icon

CPH5852

Ordering number ENN6899 CPH5802 MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit mm (MCH3306) and a Schottky Barrier Diode (SBS004) 2171 contained in one package facilitating high-density [CPH5802] mounting. 2.9 0.15 [MOSFET] 5 4 3 Low

 9.2. Size:55K  sanyo
cph5801.pdf pdf_icon

CPH5852

Ordering number EN6427 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features Package Dimensions The CPH5801 composite device consists of follow- unit mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ON [CPH5801] resistance, high-speed switching, and low driving 2.9 0

 9.3. Size:39K  sanyo
cph5803.pdf pdf_icon

CPH5852

Ordering number ENN6935 CPH5803 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit mm (MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density [CPH5803] mounting. 2.9 0.15 [MOSFET] 5 4 3 L

Otros transistores... CPH3341 , CPH3362 , CPH3427 , CPH3430 , CPH3442 , CPH3459 , CPH3461 , CPH3462 , IRFZ44N , CPH5871 , CPH6311 , CPH6411 , CPH6429 , CPH6434 , CPH6635 , CPH6636R , CPMF-1200-S080B .

History: LSH65R570GT

 

 

 

 

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