CPH5852 - описание и поиск аналогов

Ordering number ENA0336 CPH5852 SANYO Semiconductors DATA SHEET MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5852 General-Purpose Switching Device Applications Features Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS] Low ON-resistance Ultrahigh-speed swi

Ordering number ENN6899 CPH5802 MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit mm (MCH3306) and a Schottky Barrier Diode (SBS004) 2171 contained in one package facilitating high-density [CPH5802] mounting. 2.9 0.15 [MOSFET] 5 4 3 Low

Ordering number EN6427 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features Package Dimensions The CPH5801 composite device consists of follow- unit mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ON [CPH5801] resistance, high-speed switching, and low driving 2.9 0

Ordering number ENN6935 CPH5803 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit mm (MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density [CPH5803] mounting. 2.9 0.15 [MOSFET] 5 4 3 L

Ordering number ENN6980 CPH5804 MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density [CPH5804] mounting. 2.9 0.15 [MOSFET] 5 4 3 Lo

Ordering number ENN6981 CPH5805 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density [CPH5805] mounting. 2.9 0.15 [MOSFET] 5 4 3 Lo

CPH5871 Power MOSFET www.onsemi.com 30V, 52m , 3.5A, Single N-Channel with Schottky Diode Features VDSS RDS(on) Max ID Max Composite Type with a N-channel Sillicon MOSFET and a 52m @ 4.5V [MOSFET] Schottky Barrier Diode Contained in One Package 30V 74m @ 2.5V 3.5A Facilitating High-density Mounting 132m @ 1.8V ESD Diode-Protected Gate Pb-Free, Halogen