CPH5852 Datasheet. Specs and Replacement

Type Designator: CPH5852

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.9 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: CPH5

CPH5852 substitution

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CPH5852 datasheet

 ..1. Size:49K  sanyo
cph5852.pdf pdf_icon

CPH5852

Ordering number ENA0336 CPH5852 SANYO Semiconductors DATA SHEET MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5852 General-Purpose Switching Device Applications Features Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS] Low ON-resistance Ultrahigh-speed swi... See More ⇒

 9.1. Size:40K  sanyo
cph5802.pdf pdf_icon

CPH5852

Ordering number ENN6899 CPH5802 MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit mm (MCH3306) and a Schottky Barrier Diode (SBS004) 2171 contained in one package facilitating high-density [CPH5802] mounting. 2.9 0.15 [MOSFET] 5 4 3 Low... See More ⇒

 9.2. Size:55K  sanyo
cph5801.pdf pdf_icon

CPH5852

Ordering number EN6427 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features Package Dimensions The CPH5801 composite device consists of follow- unit mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ON [CPH5801] resistance, high-speed switching, and low driving 2.9 0... See More ⇒

 9.3. Size:39K  sanyo
cph5803.pdf pdf_icon

CPH5852

Ordering number ENN6935 CPH5803 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit mm (MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density [CPH5803] mounting. 2.9 0.15 [MOSFET] 5 4 3 L... See More ⇒

Detailed specifications: CPH3341, CPH3362, CPH3427, CPH3430, CPH3442, CPH3459, CPH3461, CPH3462, IRFZ44N, CPH5871, CPH6311, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.