CPH5871 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH5871
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: CPH5

Búsqueda de reemplazo de MOSFET CPH5871

CPH5871 Datasheet (PDF)

..1. Size:481K onsemi
cph5871.pdf

CPH5871 Power MOSFET www.onsemi.com 30V, 52m, 3.5A, Single N-Channel with Schottky Diode Features VDSS RDS(on) Max ID Max Composite Type with a N-channel Sillicon MOSFET and a 52m@ 4.5V [MOSFET] Schottky Barrier Diode Contained in One Package 30V 74m@ 2.5V 3.5A Facilitating High-density Mounting 132m@ 1.8V ESD Diode-Protected Gate Pb-Free, Halogen

9.1. Size:40K sanyo
cph5802.pdf

Ordering number : ENN6899CPH5802MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5802DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3306) and a Schottky Barrier Diode (SBS004) 2171contained in one package facilitating high-density[CPH5802]mounting.2.90.15[MOSFET]5 4 3 Low

9.2. Size:55K sanyo
cph5801.pdf

Ordering number:EN6427MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5801DC/DC Converter ApplicationsFeatures Package Dimensions The CPH5801 composite device consists of follow-unit:mming two devices to facilitate high-density mounting.2171One is an N-channel MOSFET that features low ON[CPH5801]resistance, high-speed switching, and low driving2.90

9.3. Size:39K sanyo
cph5803.pdf

Ordering number : ENN6935CPH5803MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5803DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3405) and a Schottky Barrier Diode (SBS004M) 2171contained in one package facilitating high-density[CPH5803]mounting.2.90.15[MOSFET]5 4 3 L

9.4. Size:50K sanyo
cph5804.pdf

Ordering number : ENN6980CPH5804MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5804DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3312) and a Schottky Barrier Diode (SBS006M) 2171contained in one package facilitating high-density[CPH5804]mounting.2.90.15[MOSFET]5 4 3 Lo

9.5. Size:49K sanyo
cph5852.pdf

Ordering number : ENA0336CPH5852SANYO SemiconductorsDATA SHEETMOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5852General-Purpose Switching DeviceApplicationsFeatures Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3),facilitating high-density mounting. [MOS] Low ON-resistance Ultrahigh-speed swi

9.6. Size:49K sanyo
cph5805.pdf

Ordering number : ENN6981CPH5805MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5805DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3412) and a Schottky Barrier Diode (SBS006) 2171contained in one package facilitating high-density[CPH5805]mounting.2.90.15[MOSFET]5 4 3 Lo

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