CPH5871 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH5871
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41 nS
Cossⓘ - Capacitancia de salida: 59 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Encapsulados: CPH5
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CPH5871 datasheet
cph5871.pdf
CPH5871 Power MOSFET www.onsemi.com 30V, 52m , 3.5A, Single N-Channel with Schottky Diode Features VDSS RDS(on) Max ID Max Composite Type with a N-channel Sillicon MOSFET and a 52m @ 4.5V [MOSFET] Schottky Barrier Diode Contained in One Package 30V 74m @ 2.5V 3.5A Facilitating High-density Mounting 132m @ 1.8V ESD Diode-Protected Gate Pb-Free, Halogen
cph5802.pdf
Ordering number ENN6899 CPH5802 MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit mm (MCH3306) and a Schottky Barrier Diode (SBS004) 2171 contained in one package facilitating high-density [CPH5802] mounting. 2.9 0.15 [MOSFET] 5 4 3 Low
cph5801.pdf
Ordering number EN6427 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features Package Dimensions The CPH5801 composite device consists of follow- unit mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ON [CPH5801] resistance, high-speed switching, and low driving 2.9 0
cph5803.pdf
Ordering number ENN6935 CPH5803 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit mm (MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density [CPH5803] mounting. 2.9 0.15 [MOSFET] 5 4 3 L
Otros transistores... CPH3362, CPH3427, CPH3430, CPH3442, CPH3459, CPH3461, CPH3462, CPH5852, IRF3205, CPH6311, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B
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