Справочник MOSFET. CPH5871

 

CPH5871 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CPH5871
   Маркировка: YZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.7 nC
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: CPH5

 Аналог (замена) для CPH5871

 

 

CPH5871 Datasheet (PDF)

 ..1. Size:481K  onsemi
 cph5871.pdf

CPH5871 CPH5871

CPH5871 Power MOSFET www.onsemi.com 30V, 52m, 3.5A, Single N-Channel with Schottky Diode Features VDSS RDS(on) Max ID Max Composite Type with a N-channel Sillicon MOSFET and a 52m@ 4.5V [MOSFET] Schottky Barrier Diode Contained in One Package 30V 74m@ 2.5V 3.5A Facilitating High-density Mounting 132m@ 1.8V ESD Diode-Protected Gate Pb-Free, Halogen

 9.1. Size:40K  sanyo
 cph5802.pdf

CPH5871 CPH5871

Ordering number : ENN6899CPH5802MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5802DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3306) and a Schottky Barrier Diode (SBS004) 2171contained in one package facilitating high-density[CPH5802]mounting.2.90.15[MOSFET]5 4 3 Low

 9.2. Size:55K  sanyo
 cph5801.pdf

CPH5871 CPH5871

Ordering number:EN6427MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5801DC/DC Converter ApplicationsFeatures Package Dimensions The CPH5801 composite device consists of follow-unit:mming two devices to facilitate high-density mounting.2171One is an N-channel MOSFET that features low ON[CPH5801]resistance, high-speed switching, and low driving2.90

 9.3. Size:39K  sanyo
 cph5803.pdf

CPH5871 CPH5871

Ordering number : ENN6935CPH5803MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5803DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3405) and a Schottky Barrier Diode (SBS004M) 2171contained in one package facilitating high-density[CPH5803]mounting.2.90.15[MOSFET]5 4 3 L

 9.4. Size:50K  sanyo
 cph5804.pdf

CPH5871 CPH5871

Ordering number : ENN6980CPH5804MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5804DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3312) and a Schottky Barrier Diode (SBS006M) 2171contained in one package facilitating high-density[CPH5804]mounting.2.90.15[MOSFET]5 4 3 Lo

 9.5. Size:49K  sanyo
 cph5852.pdf

CPH5871 CPH5871

Ordering number : ENA0336CPH5852SANYO SemiconductorsDATA SHEETMOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5852General-Purpose Switching DeviceApplicationsFeatures Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3),facilitating high-density mounting. [MOS] Low ON-resistance Ultrahigh-speed swi

 9.6. Size:49K  sanyo
 cph5805.pdf

CPH5871 CPH5871

Ordering number : ENN6981CPH5805MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeCPH5805DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3412) and a Schottky Barrier Diode (SBS006) 2171contained in one package facilitating high-density[CPH5805]mounting.2.90.15[MOSFET]5 4 3 Lo

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