CPH5871 Datasheet. Specs and Replacement

Type Designator: CPH5871

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: CPH5

CPH5871 substitution

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CPH5871 datasheet

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cph5871.pdf pdf_icon

CPH5871

CPH5871 Power MOSFET www.onsemi.com 30V, 52m , 3.5A, Single N-Channel with Schottky Diode Features VDSS RDS(on) Max ID Max Composite Type with a N-channel Sillicon MOSFET and a 52m @ 4.5V [MOSFET] Schottky Barrier Diode Contained in One Package 30V 74m @ 2.5V 3.5A Facilitating High-density Mounting 132m @ 1.8V ESD Diode-Protected Gate Pb-Free, Halogen ... See More ⇒

 9.1. Size:40K  sanyo
cph5802.pdf pdf_icon

CPH5871

Ordering number ENN6899 CPH5802 MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit mm (MCH3306) and a Schottky Barrier Diode (SBS004) 2171 contained in one package facilitating high-density [CPH5802] mounting. 2.9 0.15 [MOSFET] 5 4 3 Low... See More ⇒

 9.2. Size:55K  sanyo
cph5801.pdf pdf_icon

CPH5871

Ordering number EN6427 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features Package Dimensions The CPH5801 composite device consists of follow- unit mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ON [CPH5801] resistance, high-speed switching, and low driving 2.9 0... See More ⇒

 9.3. Size:39K  sanyo
cph5803.pdf pdf_icon

CPH5871

Ordering number ENN6935 CPH5803 MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit mm (MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density [CPH5803] mounting. 2.9 0.15 [MOSFET] 5 4 3 L... See More ⇒

Detailed specifications: CPH3362, CPH3427, CPH3430, CPH3442, CPH3459, CPH3461, CPH3462, CPH5852, IRF3205, CPH6311, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B

Keywords - CPH5871 MOSFET specs

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