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NDD60N550U1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDD60N550U1

Código: 60N550U1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 94 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 8.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 18 nC

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 33 pF

Resistencia drenaje-fuente RDS(on): 0.55 Ohm

Empaquetado / Estuche: DPAK, IPAK

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NDD60N550U1 Datasheet (PDF)

1.1. ndd60n550u1.pdf Size:129K _onsemi

NDD60N550U1
NDD60N550U1

NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 600 V 550 mW @ 10 V Parameter Symbol NDD Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS ±25 V N-Channel

4.1. ndd60n360u1.pdf Size:130K _onsemi

NDD60N550U1
NDD60N550U1

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit 600 V 360 mW @ 10 V Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS ±25 V N-Channel

4.2. ndd60n900u1.pdf Size:128K _onsemi

NDD60N550U1
NDD60N550U1

NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

 4.3. ndd60n745u1.pdf Size:129K _onsemi

NDD60N550U1
NDD60N550U1

NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features • 100% Avalanche Tested http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 745 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

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