NDD60N550U1 Todos los transistores

 

NDD60N550U1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDD60N550U1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: DPAK IPAK
 

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NDD60N550U1 datasheet

 ..1. Size:129K  onsemi
 ndd60n550u1.pdf pdf_icon

NDD60N550U1

NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 600 V 550 mW @ 10 V Parameter Symbol NDD Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS 25 V N-Channel

 8.1. Size:130K  onsemi
 ndd60n360u1.pdf pdf_icon

NDD60N550U1

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit 600 V 360 mW @ 10 V Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS 25 V N-Channel

 8.2. Size:128K  onsemi
 ndd60n900u1.pdf pdf_icon

NDD60N550U1

NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features 100% Avalanche Tested http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

 8.3. Size:129K  onsemi
 ndd60n745u1.pdf pdf_icon

NDD60N550U1

NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features 100% Avalanche Tested http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 745 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

MOSTRAR MÁS

Otros transistores... NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , STP80NF70 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z , NDDP010N25AZ , NDFP03N150C , NDFP03N150CG , NDFPD1N150C , NDFPD1N150CG .

 

 
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