NDD60N550U1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NDD60N550U1
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 94 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 33 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: DPAK IPAK
Аналог (замена) для NDD60N550U1
NDD60N550U1 Datasheet (PDF)
ndd60n550u1.pdf

NDD60N550U1N-Channel Power MOSFET600 V, 550 mWFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 550 mW @ 10 VParameter Symbol NDD UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGS 25 V N-Channel
ndd60n360u1.pdf

NDD60N360U1N-Channel Power MOSFET600 V, 360 mWFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol NDD Unit 600 V 360 mW @ 10 VDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGS 25 VN-Channel
ndd60n900u1.pdf

NDD60N900U1N-Channel Power MOSFET600 V, 900 mWFeatures 100% Avalanche Testedhttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX600 V 900 mW @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Gate-to-Source V
ndd60n745u1.pdf

NDD60N745U1N-Channel Power MOSFET600 V, 745 mWFeatures 100% Avalanche Testedhttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX600 V 745 mW @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Gate-to-Source V
Другие MOSFET... NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , 20N50 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z , NDDP010N25AZ , NDFP03N150C , NDFP03N150CG , NDFPD1N150C , NDFPD1N150CG .
History: YJL2312AL
History: YJL2312AL



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