NDD60N550U1 MOSFET. Datasheet pdf. Equivalent
Type Designator: NDD60N550U1
Marking Code: 60N550U1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 33 pF
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: DPAK, IPAK
NDD60N550U1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDD60N550U1 Datasheet (PDF)
0.1. ndd60n550u1.pdf 
Size:129K _onsemi
NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 600 V 550 mW @ 10 V Parameter Symbol NDD Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS ±25 V N-Channel
8.1. ndd60n360u1.pdf Size:130K _onsemi
NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit 600 V 360 mW @ 10 V Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS ±25 V N-Channel
8.2. ndd60n900u1.pdf Size:128K _onsemi
NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V
8.3. ndd60n745u1.pdf Size:129K _onsemi
NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features • 100% Avalanche Tested http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 745 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V
Datasheet: SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , SQD23N06-31L , IRF9530 , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L , SQD45P03-12 .
