NP35N055YUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Preliminary Data Sheet NP35N055YUK R07DS1002EJ010055 V 35 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.7 m MAX. (VGS = 10 V, ID = 18 A) Non logic level drive t

VNP35N07"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE

VNP35N07"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE

Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 17.5 A) Low Ciss: Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V) Designed

Preliminary Data Sheet R07DS0182EJ0100NP35N04YLG Rev.1.00Oct 22, 2010MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 9.7 m MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 m MAX. (VGS = 5 V, ID = 17.5 A) Logic level