NP35N055YUK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP35N055YUK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 97 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm

Encapsulados: HSON

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NP35N055YUK datasheet

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 np35n055yuk.pdf pdf_icon

NP35N055YUK

Preliminary Data Sheet NP35N055YUK R07DS1002EJ0100 55 V 35 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 08, 2013 Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.7 m MAX. (VGS = 10 V, ID = 18 A) Non logic level drive t

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 vnp35n07.pdf pdf_icon

NP35N055YUK

VNP35N07 "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE

 8.2. Size:280K  st
 vnp35n07 2.pdf pdf_icon

NP35N055YUK

VNP35N07 "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE

 8.3. Size:222K  renesas
 np35n04yug.pdf pdf_icon

NP35N055YUK

Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 17.5 A) Low Ciss Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V) Designed

MOSTRAR MÁS

Otros transistores... NP34N055HHE, NP34N055HLE, NP34N055IHE, NP34N055ILE, NP34N055SHE, NP34N055SLE, NP35N04YLG, NP35N04YUG, AON7403, NP36N055HHE, NP36N055HLE, NP36N055IHE, NP36N055ILE, NP36N055SHE, NP36N055SLE, NP36N10SDE, NP36P04KDG