NP35N055YUK
MOSFET. Datasheet pdf. Equivalent
Type Designator: NP35N055YUK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 97
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067
Ohm
Package: HSON
NP35N055YUK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP35N055YUK
Datasheet (PDF)
..1. Size:113K renesas
np35n055yuk.pdf 
Preliminary Data Sheet NP35N055YUK R07DS1002EJ010055 V 35 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.7 m MAX. (VGS = 10 V, ID = 18 A) Non logic level drive t
8.1. Size:279K st
vnp35n07.pdf
VNP35N07"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE
8.2. Size:280K st
vnp35n07 2.pdf
VNP35N07"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE
8.3. Size:222K renesas
np35n04yug.pdf
Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 17.5 A) Low Ciss: Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V) Designed
8.4. Size:207K renesas
np35n04ylg.pdf
Preliminary Data Sheet R07DS0182EJ0100NP35N04YLG Rev.1.00Oct 22, 2010MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 9.7 m MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 m MAX. (VGS = 5 V, ID = 17.5 A) Logic level
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