NP75N055YUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NP75N055YUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 138 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: HSON

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NP75N055YUK Datasheet (PDF)

..1. Size:112K renesas
np75n055yuk.pdf

Preliminary Data Sheet NP75N055YUK R07DS1005EJ010055 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive t

8.1. Size:112K renesas
np75n04yuk.pdf

Preliminary Data Sheet NP75N04YUK R07DS1004EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ

8.2. Size:222K renesas
np75n04yug.pdf

Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

8.3. Size:105K renesas
np75n04vdk.pdf

Preliminary Data Sheet NP75N04VDK R07DS1015EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF

8.4. Size:92K renesas
np75n04vuk.pdf

Preliminary Data Sheet NP75N04VUK R07DS0954EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 20, 2012Description The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF T

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History: IRHQ567110

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