NP75N055YUK
MOSFET. Datasheet pdf. Equivalent
Type Designator: NP75N055YUK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 138
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package: HSON
NP75N055YUK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP75N055YUK
Datasheet (PDF)
..1. Size:112K renesas
np75n055yuk.pdf 
Preliminary Data Sheet NP75N055YUK R07DS1005EJ010055 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive t
8.1. Size:112K renesas
np75n04yuk.pdf
Preliminary Data Sheet NP75N04YUK R07DS1004EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ
8.2. Size:222K renesas
np75n04yug.pdf
Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe
8.3. Size:105K renesas
np75n04vdk.pdf
Preliminary Data Sheet NP75N04VDK R07DS1015EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF
8.4. Size:92K renesas
np75n04vuk.pdf
Preliminary Data Sheet NP75N04VUK R07DS0954EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 20, 2012Description The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF T
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