NP75N055YUK Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NP75N055YUK
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 138 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 360 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: HSON
Аналог (замена) для NP75N055YUK
NP75N055YUK Datasheet (PDF)
np75n055yuk.pdf

Preliminary Data Sheet NP75N055YUK R07DS1005EJ010055 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive t
np75n04yuk.pdf

Preliminary Data Sheet NP75N04YUK R07DS1004EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ
np75n04yug.pdf

Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe
np75n04vdk.pdf

Preliminary Data Sheet NP75N04VDK R07DS1015EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF
Другие MOSFET... NP60N055VUK , NP70N04MUG , NP70N10KUF , NP74N04YUG , NP75N04VDK , NP75N04VUK , NP75N04YUG , NP75N04YUK , MMIS60R580P , NP75P03YDG , NP75P04YLG , NP80N03CDE , NP80N03CLE , NP80N03DDE , NP80N03DLE , NP80N03EDE , NP80N03ELE .
History: BUZ332A | SMG2328S | PDN2318S | KHB7D0N65F2 | MTP2N55 | KTK5131E | HSBB3072
History: BUZ332A | SMG2328S | PDN2318S | KHB7D0N65F2 | MTP2N55 | KTK5131E | HSBB3072



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