IPI05CNE8NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPI05CNE8NG Datasheet (PDF)

4.1. Size:503K infineon
ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf pdf_icon

IPB051NE8N G IPI05CNE8N GIPP054NE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR 5.1mDS(on),max (TO 263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

7.1. Size:781K infineon
ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf pdf_icon

IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

7.2. Size:270K inchange semiconductor
ipi05cn10n.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI05CN10NFEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Otros transistores... NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS , IPP050N06NG , IRFZ24N , IPP054NE8NG , IPI06CN10NG , IPI08CNE8NG , IPP08CNE8NG , IPD12CNE8NG , IPI12CNE8NG , IPP12CNE8NG , IPI45N04S4L-08 .