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IPI05CNE8NG Spec and Replacement


   Type Designator: IPI05CNE8NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 1710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO262

 IPI05CNE8NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI05CNE8NG Specs

 4.1. Size:503K  infineon
 ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf pdf_icon

IPI05CNE8NG

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R 5.1 m DS(on),max (TO 263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target... See More ⇒

 7.1. Size:781K  infineon
 ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf pdf_icon

IPI05CNE8NG

IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7... See More ⇒

 7.2. Size:270K  inchange semiconductor
 ipi05cn10n.pdf pdf_icon

IPI05CNE8NG

isc N-Channel MOSFET Transistor IPI05CN10N FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒

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Detailed specifications: NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS , IPP050N06NG , TK10A60D , IPP054NE8NG , IPI06CN10NG , IPI08CNE8NG , IPP08CNE8NG , IPD12CNE8NG , IPI12CNE8NG , IPP12CNE8NG , IPI45N04S4L-08 .

Keywords - IPI05CNE8NG MOSFET specs

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