IPI08CNE8NG Todos los transistores

 

IPI08CNE8NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI08CNE8NG

Código: 08CNE8N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 167 W

Tensión drenaje-fuente (Vds): 85 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 95 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 75 nC

Tiempo de elevación (tr): 24 nS

Conductancia de drenaje-sustrato (Cd): 942 pF

Resistencia drenaje-fuente RDS(on): 0.0085 Ohm

Empaquetado / Estuche: TO262

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IPI08CNE8NG Datasheet (PDF)

1.1. ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g.pdf Size:772K _update-mosfet

IPI08CNE8NG
IPI08CNE8NG

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

1.2. ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf Size:772K _infineon

IPI08CNE8NG
IPI08CNE8NG

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

 5.1. ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf Size:757K _update-mosfet

IPI08CNE8NG
IPI08CNE8NG

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO 252) 8.2 mW • Excellent gate charge x R product (FOM) DS(on) ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JED

5.2. ipi084n06l3g.pdf Size:427K _infineon

IPI08CNE8NG
IPI08CNE8NG

Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 60 V • Ideal for high frequency switching and sync. rec. RDS(on),max (SMD) 8.1 mΩ • Optimized technology for DC/DC converters ID 50 A • Excellent gate charge x R product (FOM) DS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS complian

 5.3. ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf Size:757K _infineon

IPI08CNE8NG
IPI08CNE8NG

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO 252) 8.2 mW • Excellent gate charge x R product (FOM) DS(on) ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JED

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