IPI08CNE8NG MOSFET PDF: N-Ch, 85V, 95A. Datasheet. Full specification with pinout and replacement list

IPI08CNE8NG Specs and Replacement

   Type Designator: IPI08CNE8NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 942 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO262

IPI08CNE8NG substitution

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IPI08CNE8NG datasheet

4.1. Size:772K infineon
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IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8... See More ⇒

7.1. Size:527K infineon
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IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 8.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 95 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target ... See More ⇒

9.1. Size:778K infineon
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IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED... See More ⇒

9.2. Size:757K infineon
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