All MOSFET. IPI08CNE8NG Datasheet

 

IPI08CNE8NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPI08CNE8NG

Marking Code: 08CNE8N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 95 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 942 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO262

IPI08CNE8NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI08CNE8NG Datasheet (PDF)

1.1. ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g.pdf Size:772K _update-mosfet

IPI08CNE8NG
IPI08CNE8NG

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

1.2. ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf Size:772K _infineon

IPI08CNE8NG
IPI08CNE8NG

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

 5.1. ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf Size:757K _update-mosfet

IPI08CNE8NG
IPI08CNE8NG

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO 252) 8.2 mW • Excellent gate charge x R product (FOM) DS(on) ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JED

5.2. ipi084n06l3g.pdf Size:427K _infineon

IPI08CNE8NG
IPI08CNE8NG

Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 60 V • Ideal for high frequency switching and sync. rec. RDS(on),max (SMD) 8.1 mΩ • Optimized technology for DC/DC converters ID 50 A • Excellent gate charge x R product (FOM) DS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS complian

 5.3. ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf Size:757K _infineon

IPI08CNE8NG
IPI08CNE8NG

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO 252) 8.2 mW • Excellent gate charge x R product (FOM) DS(on) ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JED

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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