SSM5N03FE Todos los transistores

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 ssm5n03fe.pdf

SSM5N03FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM5N03FE High-Speed Switching Applications Unit mm Analog-Switch Applications Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suita

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 ssm5n05fu.pdf

SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit mm Optimum for high-density mounting in small packages Low on-resistance Ron = 0.8 (max) (@VGS = 4 V) Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symb

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 ssm5n16fu.pdf

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 ssm5n15fu.pdf

SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Unit mm Analog Switch Applications Small package Low ON resistance RDS (ON) = 4.0 (max) (@VGS = 4 V) RDS (ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source vol

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 ssm5n15fe.pdf

SSM5N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FE High Speed Switching Applications Unit mm Analog Switch Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS

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 ssm5n16fe.pdf