Справочник MOSFET. SSM5N03FE

 

SSM5N03FE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM5N03FE
   Маркировка: DA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 9.3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm

 Аналог (замена) для SSM5N03FE

 

 

SSM5N03FE Datasheet (PDF)

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 ssm5n03fe.pdf

SSM5N03FE SSM5N03FE

SSM5N03FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM5N03FE High-Speed Switching Applications Unit: mmAnalog-Switch Applications Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suita

 8.1. Size:156K  toshiba
 ssm5n05fu.pdf

SSM5N03FE SSM5N03FE

SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages Low on-resistance: Ron = 0.8 (max) (@VGS = 4 V) : Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symb

 9.1. Size:131K  toshiba
 ssm5n16fu.pdf

SSM5N03FE SSM5N03FE

SSM5N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FU High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 9.2. Size:178K  toshiba
 ssm5n15fu.pdf

SSM5N03FE SSM5N03FE

SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Unit: mmAnalog Switch Applications Small package Low ON resistance : RDS (ON) = 4.0 (max) (@VGS = 4 V) : RDS (ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source vol

 9.3. Size:153K  toshiba
 ssm5n15fe.pdf

SSM5N03FE SSM5N03FE

SSM5N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FE High Speed Switching Applications Unit: mmAnalog Switch Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS

 9.4. Size:132K  toshiba
 ssm5n16fe.pdf

SSM5N03FE SSM5N03FE

SSM5N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FE High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

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