SSM5N03FE MOSFET Datasheet: N-Ch, 20V, 0.1A. Full specification with pinout and replacement list

SSM5N03FE Specs and Replacement

Type Designator: SSM5N03FE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

SSM5N03FE substitution

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SSM5N03FE datasheet

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SSM5N03FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM5N03FE High-Speed Switching Applications Unit mm Analog-Switch Applications Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suita... See More ⇒

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SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit mm Optimum for high-density mounting in small packages Low on-resistance Ron = 0.8 (max) (@VGS = 4 V) Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symb... See More ⇒

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SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Unit mm Analog Switch Applications Small package Low ON resistance RDS (ON) = 4.0 (max) (@VGS = 4 V) RDS (ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source vol... See More ⇒