SSM5N03FE Datasheet and Replacement. Cross Reference Search

SSM5N03FE Datasheet (PDF)

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SSM5N03FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM5N03FE High-Speed Switching Applications Unit: mmAnalog-Switch Applications Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suita

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SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages Low on-resistance: Ron = 0.8 (max) (@VGS = 4 V) : Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symb

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SSM5N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FU High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

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SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Unit: mmAnalog Switch Applications Small package Low ON resistance : RDS (ON) = 4.0 (max) (@VGS = 4 V) : RDS (ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source vol