NCE0117K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE0117K 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.3 nS
Cossⓘ - Capacitancia de salida: 240 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: TO-252-2L
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NCE0117K datasheet
nce0117k.pdf
NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117k.pdf
Pb Free Product http //www.ncepower.com NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117.pdf
Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117ak.pdf
NCE0117AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =17A DS D R
Otros transistores... FS10KM-2, FTP50N20R, JCS12N65T, JCS12N65CT, JCS12N65FT, ME4410A, MMD65R600QRH, MT3245, 8205A, NTMFS4C55N, SI9953DY, STP110N7F6, SUP85N03-07P, SUB85N03-07P, SVF4N60CAF, SVF4N60CAK, SVF4N60CAD
Parámetros del MOSFET. Cómo se afectan entre sí.
History: CES2316 | APG054N10D
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