NCE0117K Todos los transistores

 

NCE0117K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0117K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.3 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-252-2L

 Búsqueda de reemplazo de MOSFET NCE0117K

 

Principales características: NCE0117K

 ..1. Size:441K  1
 nce0117k.pdf pdf_icon

NCE0117K

NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 ..2. Size:436K  ncepower
 nce0117k.pdf pdf_icon

NCE0117K

Pb Free Product http //www.ncepower.com NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.1. Size:373K  ncepower
 nce0117.pdf pdf_icon

NCE0117K

Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 7.2. Size:653K  ncepower
 nce0117ak.pdf pdf_icon

NCE0117K

NCE0117AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =17A DS D R

MOSTRAR MÁS

Otros transistores... FS10KM-2 , FTP50N20R , JCS12N65T , JCS12N65CT , JCS12N65FT , ME4410A , MMD65R600QRH , MT3245 , IRF3710 , NTMFS4C55N , SI9953DY , STP110N7F6 , SUP85N03-07P , SUB85N03-07P , SVF4N60CAF , SVF4N60CAK , SVF4N60CAD .

History: AP4820AGYT

 

 
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