All MOSFET. NCE0117K Datasheet


NCE0117K MOSFET. Datasheet pdf. Equivalent

Type Designator: NCE0117K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 9.3 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO-252-2L

NCE0117K Transistor Equivalent Substitute - MOSFET Cross-Reference Search


NCE0117K Datasheet (PDF)

0.1. nce0117k.pdf Size:441K _1


NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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