NCE0117K Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE0117K
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9.3 ns
Cossⓘ - Выходная емкость: 240 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
Тип корпуса: TO-252-2L
- подбор MOSFET транзистора по параметрам
NCE0117K Datasheet (PDF)
nce0117k.pdf

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117k.pdf

Pb Free Producthttp://www.ncepower.com NCE0117KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117.pdf

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0117ak.pdf

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCEP018NH30QU | STK23N06L | IPD50R280CE | RU8080R | AO3400MI-MS | NDT6N70 | HGB016N06S
History: NCEP018NH30QU | STK23N06L | IPD50R280CE | RU8080R | AO3400MI-MS | NDT6N70 | HGB016N06S



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
bd140 transistor | 2n2222a datasheet | bd136 | tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent