ME4410AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME4410AD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 40 pF
Resistencia entre drenaje y fuente RDS(on): 3.8 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET ME4410AD
ME4410AD Datasheet (PDF)
me4410ad.pdf
ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
me4410ad.pdf
ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
me4410a.pdf
ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON)20m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored
me4410.pdf
ME4410www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
me4411 me4411-g.pdf
ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON)10m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON)13m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD
me4413d me4413d-g.pdf
ME4413D/ME4413D-G P-Channel Enhancement Mode Mosfet , ESD ProtectionGENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-4.5VThe ME4413D is the P-Channel logic enhancement mode power RDS(ON) 17m@VGS=-2.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 26m@VGS=-1.8Vtrench technology. This high density process is especially tailo
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