All MOSFET. ME4410AD Datasheet

 

ME4410AD MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4410AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO252

 ME4410AD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4410AD Datasheet (PDF)

 ..1. Size:2143K  1
 me4410ad.pdf

ME4410AD ME4410AD

ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 ..2. Size:2143K  cn vbsemi
 me4410ad.pdf

ME4410AD ME4410AD

ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 7.1. Size:667K  1
 me4410a.pdf

ME4410AD ME4410AD

ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON)20m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored

 8.1. Size:2143K  cn vbsemi
 me4410.pdf

ME4410AD ME4410AD

ME4410www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8

 9.1. Size:1245K  matsuki electric
 me4411 me4411-g.pdf

ME4410AD ME4410AD

ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON)10m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON)13m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.2. Size:1807K  matsuki electric
 me4413d me4413d-g.pdf

ME4410AD ME4410AD

ME4413D/ME4413D-G P-Channel Enhancement Mode Mosfet , ESD ProtectionGENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-4.5VThe ME4413D is the P-Channel logic enhancement mode power RDS(ON) 17m@VGS=-2.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 26m@VGS=-1.8Vtrench technology. This high density process is especially tailo

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History: STT03N10

 

 
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