All MOSFET. ME4410AD Datasheet

 

ME4410AD Datasheet and Replacement


   Type Designator: ME4410AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO252
 

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ME4410AD Datasheet (PDF)

 ..1. Size:2143K  1
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ME4410AD

ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 ..2. Size:2143K  cn vbsemi
me4410ad.pdf pdf_icon

ME4410AD

ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 7.1. Size:667K  1
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ME4410AD

ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON)20m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored

 8.1. Size:2143K  cn vbsemi
me4410.pdf pdf_icon

ME4410AD

ME4410www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8

Datasheet: 7N80G-TQ2-T , AO3419L , CMP100N04 , CMB100N04 , CMI100N04 , HY4306W , HY4306A , MDF1723 , IRFP250 , ME4970 , ME4970G , NDP04N60Z , PDEC3907Z , PFB2N60 , PFF2N60 , SI4947ADY , STD180N4F6 .

History: KRF7204 | IPB34CN10N | FQD2N50TF | HMS15N65D | 2SK4077-ZK | P2610BT | DMN3035LWN

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