FCH099N60E Todos los transistores

 

FCH099N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCH099N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm

Encapsulados: TO-247

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FCH099N60E datasheet

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fch099n60e.pdf pdf_icon

FCH099N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:200K  inchange semiconductor
fch099n60e.pdf pdf_icon

FCH099N60E

isc N-Channel MOSFET Transistor FCH099N60E FEATURES Static Drain-Source On-Resistance R = 99m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Power factor correction Switched mode power supplies Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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fch099n65s3.pdf pdf_icon

FCH099N60E

FCH099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced

 6.2. Size:361K  inchange semiconductor
fch099n65s3.pdf pdf_icon

FCH099N60E

isc N-Channel MOSFET Transistor FCH099N65S3 FEATURES With TO-247 packaging Drain Source Voltage- V 650V DSS Static drain-source on-resistance RDS(on) 99m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... AOTF12N65L , AOTF2144L , AOTF25S65L , BUZ31H3046 , DMG3N60SCT , DMN95H8D5HCT , DMP6180SK3-13 , FCH040N65S3 , AO3400A , FCH099N65S3 , FCP099N60E , FCP125N60E , FCP165N60E , FCP260N65S3 , FCP850N80Z , FCPF067N65S3 , FCPF150N65F .

History: RTQ025P02 | NTTFS5811NLTAG | PNMT6N1-LB

 

 

 

 

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