FCH099N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH099N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 357 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 37 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 88 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 75 pF
Resistencia entre drenaje y fuente RDS(on): 0.099 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET FCH099N60E
FCH099N60E Datasheet (PDF)
fch099n60e.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch099n60e.pdf
isc N-Channel MOSFET Transistor FCH099N60EFEATURESStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower factor correctionSwitched mode power suppliesUninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
fch099n65s3.pdf
FCH099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advanced
fch099n65s3.pdf
isc N-Channel MOSFET Transistor FCH099N65S3FEATURESWith TO-247 packagingDrain Source Voltage-: V 650VDSSStatic drain-source on-resistance:RDS(on) 99m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
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