FCH099N60E - описание и поиск аналогов

 

FCH099N60E. Аналоги и основные параметры

Наименование производителя: FCH099N60E

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 357 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 37 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 23 ns

Cossⓘ - Выходная емкость: 75 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm

Тип корпуса: TO-247

Аналог (замена) для FCH099N60E

- подборⓘ MOSFET транзистора по параметрам

 

FCH099N60E даташит

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FCH099N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FCH099N60E

isc N-Channel MOSFET Transistor FCH099N60E FEATURES Static Drain-Source On-Resistance R = 99m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Power factor correction Switched mode power supplies Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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FCH099N60E

FCH099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced

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FCH099N60E

isc N-Channel MOSFET Transistor FCH099N65S3 FEATURES With TO-247 packaging Drain Source Voltage- V 650V DSS Static drain-source on-resistance RDS(on) 99m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... AOTF12N65L , AOTF2144L , AOTF25S65L , BUZ31H3046 , DMG3N60SCT , DMN95H8D5HCT , DMP6180SK3-13 , FCH040N65S3 , AO3400A , FCH099N65S3 , FCP099N60E , FCP125N60E , FCP165N60E , FCP260N65S3 , FCP850N80Z , FCPF067N65S3 , FCPF150N65F .

History: S-LBSS138WT1G | VS4620DP-G

 

 

 

 

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