All MOSFET. FCH099N60E Datasheet

 

FCH099N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCH099N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-247

 FCH099N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCH099N60E Datasheet (PDF)

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 fch099n60e.pdf

FCH099N60E FCH099N60E

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fch099n60e.pdf

FCH099N60E FCH099N60E

isc N-Channel MOSFET Transistor FCH099N60EFEATURESStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower factor correctionSwitched mode power suppliesUninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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 fch099n65s3.pdf

FCH099N60E FCH099N60E

FCH099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advanced

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 fch099n65s3.pdf

FCH099N60E FCH099N60E

isc N-Channel MOSFET Transistor FCH099N65S3FEATURESWith TO-247 packagingDrain Source Voltage-: V 650VDSSStatic drain-source on-resistance:RDS(on) 99m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLF574 | 2SK1917-MR

 

 
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