FCH099N60E PDF and Equivalents Search

 

FCH099N60E Specs and Replacement

Type Designator: FCH099N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO-247

FCH099N60E substitution

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FCH099N60E datasheet

 ..1. Size:773K  1
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FCH099N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..2. Size:200K  inchange semiconductor
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FCH099N60E

isc N-Channel MOSFET Transistor FCH099N60E FEATURES Static Drain-Source On-Resistance R = 99m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Power factor correction Switched mode power supplies Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

 6.1. Size:346K  1
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FCH099N60E

FCH099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced... See More ⇒

 6.2. Size:361K  inchange semiconductor
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FCH099N60E

isc N-Channel MOSFET Transistor FCH099N65S3 FEATURES With TO-247 packaging Drain Source Voltage- V 650V DSS Static drain-source on-resistance RDS(on) 99m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: AOTF12N65L, AOTF2144L, AOTF25S65L, BUZ31H3046, DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3, AO3400A, FCH099N65S3, FCP099N60E, FCP125N60E, FCP165N60E, FCP260N65S3, FCP850N80Z, FCPF067N65S3, FCPF150N65F

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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