FCP260N65S3 Todos los transistores

 

FCP260N65S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCP260N65S3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO-220
 

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FCP260N65S3 Datasheet (PDF)

 ..1. Size:330K  1
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FCP260N65S3

FCP260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored

 ..2. Size:356K  onsemi
fcp260n65s3.pdf pdf_icon

FCP260N65S3

FCP260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored

 ..3. Size:259K  inchange semiconductor
fcp260n65s3.pdf pdf_icon

FCP260N65S3

isc N-Channel MOSFET Transistor FCP260N65S3FEATURESDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Mot

 6.1. Size:818K  fairchild semi
fcp260n60e fcpf260n60e.pdf pdf_icon

FCP260N65S3

March 2014FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 15 A, 260 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 220 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge

Otros transistores... DMN95H8D5HCT , DMP6180SK3-13 , FCH040N65S3 , FCH099N60E , FCH099N65S3 , FCP099N60E , FCP125N60E , FCP165N60E , RU7088R , FCP850N80Z , FCPF067N65S3 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 , FDA44N50 , FDI036N10A , FDP8D5N10C .

History: 2SK2677 | NCEP8818AS

 

 
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