FCP260N65S3
MOSFET. Datasheet pdf. Equivalent
Type Designator: FCP260N65S3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package:
TO-220
FCP260N65S3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCP260N65S3
Datasheet (PDF)
..1. Size:330K 1
fcp260n65s3.pdf 
FCP260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored
..2. Size:356K onsemi
fcp260n65s3.pdf
FCP260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored
..3. Size:259K inchange semiconductor
fcp260n65s3.pdf
isc N-Channel MOSFET Transistor FCP260N65S3FEATURESDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Mot
6.1. Size:818K fairchild semi
fcp260n60e fcpf260n60e.pdf
March 2014FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 15 A, 260 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 220 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge
6.2. Size:831K onsemi
fcp260n60e fcpf260n60e.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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