FCP260N65S3 PDF and Equivalents Search

 

FCP260N65S3 Specs and Replacement

Type Designator: FCP260N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO-220

FCP260N65S3 substitution

- MOSFET ⓘ Cross-Reference Search

 

FCP260N65S3 datasheet

 ..1. Size:330K  1
fcp260n65s3.pdf pdf_icon

FCP260N65S3

FCP260N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored... See More ⇒

 ..2. Size:356K  onsemi
fcp260n65s3.pdf pdf_icon

FCP260N65S3

FCP260N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored... See More ⇒

 ..3. Size:259K  inchange semiconductor
fcp260n65s3.pdf pdf_icon

FCP260N65S3

isc N-Channel MOSFET Transistor FCP260N65S3 FEATURES Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Mot... See More ⇒

 6.1. Size:818K  fairchild semi
fcp260n60e fcpf260n60e.pdf pdf_icon

FCP260N65S3

March 2014 FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 220 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge ... See More ⇒

Detailed specifications: DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3, FCH099N60E, FCH099N65S3, FCP099N60E, FCP125N60E, FCP165N60E, IRFZ48N, FCP850N80Z, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A, FDP8D5N10C

Keywords - FCP260N65S3 MOSFET specs

 FCP260N65S3 cross reference

 FCP260N65S3 equivalent finder

 FCP260N65S3 pdf lookup

 FCP260N65S3 substitution

 FCP260N65S3 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.