IPI200N25N3 Todos los transistores

 

IPI200N25N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI200N25N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 297 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-262
 

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Principales características: IPI200N25N3

 ..1. Size:270K  inchange semiconductor
 ipi200n25n3.pdf pdf_icon

IPI200N25N3

isc N-Channel MOSFET Transistor IPI200N25N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 0.1. Size:758K  infineon
 ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf pdf_icon

IPI200N25N3

 7.1. Size:993K  infineon
 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPI200N25N3

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t

 7.2. Size:271K  inchange semiconductor
 ipi200n15n3.pdf pdf_icon

IPI200N25N3

isc N-Channel MOSFET Transistor IPI200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high frequency switching and sync. Rec. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

MOSTRAR MÁS

Otros transistores... IPI076N15N5 , IPI086N10N3 , IPI100N08N3 , IPI110N20N3 , IPI111N15N3 , IPI147N12N3 , IPI180N10N3 , IPI200N15N3 , AON6414A , IPI26CN10N , IPI320N20N3 , IPI35CN10N , IPI530N15N3 , IPI600N25N3 , IPI80CN10N , IRFL3713S , IRFP3207Z .

History: SI7430DP

 

 
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