All MOSFET. IPI200N25N3 Datasheet

 

IPI200N25N3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPI200N25N3

Marking Code: 200N25N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 64 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 297 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO-262

IPI200N25N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI200N25N3 Datasheet (PDF)

0.1. ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g.pdf Size:758K _infineon

IPI200N25N3
IPI200N25N3

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • N-channel, normal level RDS(on),max 20 mW • Excellent gate charge x R product (FOM) DS(on) ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application

7.1. ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf Size:993K _infineon

IPI200N25N3
IPI200N25N3

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 150 V • N-channel, normal level RDS(on),max 20 mW • Excellent gate charge x R product (FOM) DS(on) ID 50 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for t

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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