IPI35CN10N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI35CN10N
Código: 35CN10N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 58 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 27 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 18 nC
Tiempo de elevación (tr): 21 nS
Conductancia de drenaje-sustrato (Cd): 175 pF
Resistencia drenaje-fuente RDS(on): 0.035 Ohm
Empaquetado / Estuche: TO-262
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IPI35CN10N Datasheet (PDF)
1.1. ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf Size:704K _infineon
IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 34 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 27 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi
1.2. ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf Size:854K _infineon
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 33 mW • Excellent gate charge x R product (FOM) DS(on) ID 27 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f
1.3. ipi35cn10n.pdf Size:261K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(
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