IPI35CN10N MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI35CN10N
Marking Code: 35CN10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 58 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 27 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO-262
IPI35CN10N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI35CN10N Datasheet (PDF)
0.1. ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf Size:704K _infineon
IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 34 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 27 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi
0.2. ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf Size:854K _infineon
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 33 mW • Excellent gate charge x R product (FOM) DS(on) ID 27 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f
0.3. ipi35cn10n.pdf Size:261K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(
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