IRFP3207Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP3207Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente (Vds): 75 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 170 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Resistencia drenaje-fuente RDS(on): 0.0041 Ohm
Empaquetado / Estuche: TO-220
Búsqueda de reemplazo de MOSFET IRFP3207Z
IRFP3207Z Datasheet (PDF)
3.1. irfp3206pbf.pdf 
Size:297K _international_rectifier
PD - 97127 IRFP3206PbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m : l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 200A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D
4.1. irfp32n50k.pdf Size:94K _international_rectifier
PD - 94099A IRFP32N50K SMPS MOSFET HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135Ω 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize
4.2. irfp32n50kpbf.pdf Size:202K _international_rectifier
PD - 95052 IRFP32N50KPbF SMPS MOSFET HEXFET® Power MOSFET AppIications l Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.135Ω 32A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes
4.3. irfp32n50ks.pdf Size:115K _international_rectifier
PD - 94360 IRFP32N50KS SMPS MOSFET HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135Ω 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize
4.4. irfp32n50k sihfp32n50k.pdf Size:170K _vishay
IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con
4.5. irfp32n50k irfp32n50kpbf sihfp32n50k.pdf Size:175K _vishay
IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con
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