IRFP3207Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP3207Z
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 170 A
Максимальная температура канала (Tj): 175 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.0041 Ohm
Тип корпуса: TO-220
IRFP3207Z Datasheet (PDF)
irfp3207z.pdf
isc N-Channel MOSFET Transistor IRFP3207ZFEATURESDrain Current I = 170A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Speed Power SwitchingHard Switched and High Frequency
irfp3206pbf.pdf
PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
irfp3206pbf.pdf
PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
irfp3206.pdf
isc N-Channel MOSFET Transistor IRFP3206IIRFP3206FEATURESStatic drain-source on-resistance:RDS(on)3.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
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