IRFP3207Z MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP3207Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 170 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0041 Ohm
Package: TO-220
IRFP3207Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP3207Z Datasheet (PDF)
0.1. irfp3207z.pdf 
Size:260K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3207Z FEATURES ·Drain Current –I = 170A@ T =25℃ D C ·Drain Source Voltage- : V = 75V(Min) DSS ·Static Drain-Source On-Resistance : R = 4.1mΩ(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·High Speed Power Switching ·Hard Switched and High Frequency
7.1. irfp3206pbf.pdf Size:297K _international_rectifier
PD - 97127 IRFP3206PbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m : l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 200A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D
7.2. irfp3206.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3206，IIRFP3206 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.0mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
