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IRFP3207Z Spec and Replacement


   Type Designator: IRFP3207Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-220
 

 IRFP3207Z substitution

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IRFP3207Z Specs

 ..1. Size:260K  inchange semiconductor
irfp3207z.pdf pdf_icon

IRFP3207Z

isc N-Channel MOSFET Transistor IRFP3207Z FEATURES Drain Current I = 170A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R = 4.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High Speed Power Switching Hard Switched and High Frequency ... See More ⇒

 7.1. Size:297K  international rectifier
irfp3206pbf.pdf pdf_icon

IRFP3207Z

PD - 97127 IRFP3206PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 200A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D ... See More ⇒

 7.2. Size:242K  inchange semiconductor
irfp3206.pdf pdf_icon

IRFP3207Z

isc N-Channel MOSFET Transistor IRFP3206 IIRFP3206 FEATURES Static drain-source on-resistance RDS(on) 3.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc... See More ⇒

 8.1. Size:115K  international rectifier
irfp32n50ks.pdf pdf_icon

IRFP3207Z

PD - 94360 IRFP32N50KS SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize... See More ⇒

Detailed specifications: IPI200N25N3 , IPI26CN10N , IPI320N20N3 , IPI35CN10N , IPI530N15N3 , IPI600N25N3 , IPI80CN10N , IRFL3713S , IRF9540 , IRFP4905 , IRFSL4510 , IRFSL7762 , IRFSL7787 , IRFU430A , 12N65KL-TA , 12N65KL-TQ , 12N65KG-TA .

History: SPB80N06S2-05 | MCH3333A | IPI320N20N3

Keywords - IRFP3207Z MOSFET specs

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