IRFP3207Z MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP3207Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 170 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0041 Ohm
Package: TO-220
IRFP3207Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP3207Z Datasheet (PDF)
0.1. irfp3207z.pdf 
Size:260K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3207ZFEATURESDrain Current I = 170A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Speed Power SwitchingHard Switched and High Frequency
7.1. irfp3206pbf.pdf Size:297K _international_rectifier
PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
7.2. irfp3206.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3206IIRFP3206FEATURESStatic drain-source on-resistance:RDS(on)3.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
