SVF10N65T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SVF10N65T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73.67 nS
Cossⓘ - Capacitancia de salida: 128.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SVF10N65T MOSFET
SVF10N65T Datasheet (PDF)
svf10n65f svf10n65t.pdf
SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf
SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3
svf10n65cfj.pdf
SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
svf10n65cf svf10n65ck svf10n65cfjh.pdf
SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
Otros transistores... HY3410PM , HY3410MF , JCS3910V , JCS3910R , MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , IRF730 , STD448S , CRTS084NE6N , HY3210P , HY3210M , HY3210B , HY3210PS , HY3210PM , JCS8N60S .
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