SVF10N65T Datasheet and Replacement
Type Designator: SVF10N65T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 73.67 nS
Cossⓘ - Output Capacitance: 128.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
SVF10N65T substitution
SVF10N65T Datasheet (PDF)
svf10n65f svf10n65t.pdf

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3
svf10n65cfj.pdf

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
svf10n65cf svf10n65ck svf10n65cfjh.pdf

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
Datasheet: HY3410PM , HY3410MF , JCS3910V , JCS3910R , MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , BS170 , STD448S , CRTS084NE6N , HY3210P , HY3210M , HY3210B , HY3210PS , HY3210PM , JCS8N60S .
History: PTS2017 | SI4N60-TM3-T
Keywords - SVF10N65T MOSFET datasheet
SVF10N65T cross reference
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History: PTS2017 | SI4N60-TM3-T



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