JCS8N60F Todos los transistores

 

JCS8N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JCS8N60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220MF

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JCS8N60F Datasheet (PDF)

 ..1. Size:616K  1
jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf

JCS8N60F JCS8N60F

N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 ..2. Size:837K  jilin sino
jcs8n60f.pdf

JCS8N60F JCS8N60F

N RN-CHANNEL MOSFETJCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.3 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

 0.1. Size:1084K  jilin sino
jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf

JCS8N60F JCS8N60F

N RN-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU

 0.2. Size:809K  jilin sino
jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf

JCS8N60F JCS8N60F

N RN-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 8.1. Size:1248K  jilin sino
jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf

JCS8N60F JCS8N60F

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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